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| DC COMPONENTS CO., LTD. R 2SD667A DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PD TJ TSTG Rating 120 100 5 1 2 900 +150 -55 to +150 Unit V V V A A mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width (1) (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO (1) Min 120 100 5 60 30 - Typ 140 12 Max 10 1 1.5 200 - Unit V V V A V V MHz pF Test Conditions IC=10A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=100V, IE=0 IC=500mA, IB=50mA IC=150mA, VCE=5V IC=150mA, VCE=5V IC=500mA, VCE=5V IC=150mA, VCE=5V VCB=10V, f=1MHz, IE=0 VCE(sat) VBE(on) hFE1 hFE2 fT Cob 380s, Duty Cycle 2% Classification of hFE Rank Range B 60~120 C 100~200 |
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